Author Affiliations
Abstract
1 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, CAS, Shanghai, People’s Republic of China
2 Shanghai Institute of Applied Physical, CAS, Shanghai, People’s Republic of China
This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precise real-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm2 exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.
soft x-ray EUV interference lithography International Journal of Extreme Manufacturing
2020, 2(1): 012005
Author Affiliations
Abstract
1 Shanghai Institute of Applied Physics, Shanghai 201800, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Shanghai 201204, China
Achromatic Talbot lithography (ATL) with high resolution has been demonstrated to be an excellent technique for large area periodic nano-fabrication. In this work, the uniformity of pattern distribution in ATL was studied in detail. Two ATL transmission masks with ～50% duty cycle in a square lattice were illuminated by a spatial coherent broadband extreme ultraviolet beam with a relative bandwidth of 2.38%. Nonuniform dot size distribution was observed by experiments and finite-difference time-domain simulations. The sum of the two kinds of diffraction patterns, with different lattice directions (45° rotated) and different intensity distributions, results in the final nonuniform pattern distribution.
220.3740 Lithography 220.4241 Nanostructure fabrication Chinese Optics Letters
2019, 17(6): 062201
